Features: • 28 dB Gain• 30 Watts Peak Output Power• Internal Sense FETs (for improved bias control)• IS95 CDMA Performance 5 Watts Average Output Level 20% Power Added Efficiency49 dBc ACPRSpecifications Rating Symbol Value Units 19 DC Drain Supplya) Drain-to-...
PFM19030: Features: • 28 dB Gain• 30 Watts Peak Output Power• Internal Sense FETs (for improved bias control)• IS95 CDMA Performance 5 Watts Average Output Level 20% Power Added Effici...
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Rating | Symbol | Value | Units | |
19 | DC Drain Supply a) Drain-to-Source Voltage, (VGS=0), D1 & D2 & Track D1 & Track D2 b) Normal Operation (Class AB operation) |
VDS VD_SUPPLY |
+50 +30 |
Volts DC Volts DC |
20 | DC Gate Supply a) Gate-to-source Voltage (VDS=0) Normal Operation (Class AB operation) |
VGS VG_SUPPLY |
-0.5<VGS<+15 0<VGS<+6 |
Volts DC Volts DC |
21 | RF Input Power | PIN | +25 | dBm |
22 | Maximum Power Dissipation (T +85 ) a) Derate above +85 base temperature. |
PTOTAL | 65 -0.7 |
Watts Watts/ |
23 | Maximum Channel Operating Temperature | TCH | +200 | |
24 | Storage Temperature Range | TSTG | -40 to +150 |
This versatile PCS module of PFM19030 provides excellent linearity and efficiency in a low-cost surface mount package. The PFM19030 includes two stages of amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the task of bias temperature compensation of the overall amplifier. The module includes RF input, interstage, and output matching elements. The source and load impedances required for optimum operation of the module are much higher (and simpler to realize) than for unmatched Si LDMOS transistors of similar performance.
The surface mount package base of PFM19030 is typically soldered to a conventional PCB pad with an array of via holes for grounding and thermal sinking of the PFM19030. Optimized internal construction supports low FET channel temperature for reliable operation.