Features: ` 29 dB Gain` 30 Watts Peak Output Power` Internal Tracking FETs (for improved bias control)` IS95 CDMA Performance 5 Watts Average Output Level 20% Power Added Efficiency49 dBc ACPRSpecifications Rating Symbol Value Units 19 DC Drain Supplya) DraintoSourceVoltage, (VGS=0),...
PFM18030SM: Features: ` 29 dB Gain` 30 Watts Peak Output Power` Internal Tracking FETs (for improved bias control)` IS95 CDMA Performance 5 Watts Average Output Level 20% Power Added Efficiency49 dBc ACPRSpecif...
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Rating | Symbol | Value | Units | |
19 | DC Drain Supply a) DraintoSource Voltage, (VGS=0), D1 & D2 & Track D1 & Track D2 b) Normal Operation (Class AB operation) |
VDS VD_SUPPLY |
+50 +30 |
Volts DC Volts DC |
20 | DC Gate Supply a) Gatetosource Voltage (VDS=0) Normal Operation (Class AB operation) |
VGS VG_SUPPLY |
0.5<VGS<+15 0<VGS<+6 |
Volts DC Volts DC |
21 | RF Input Power | PIN | +25 | dBm |
22 | Maximum Power Dissipation (T +85 ) a) Derate above +85 base temperature. |
PTOTAL | 65 0.7 |
Watts Watts/ |
23 | Maximum Channel Operating Temperature | TCH | +200 | |
24 | Storage Temperature Range | TSTG | 40to +150 |
This versatile DCS module of PFM18030SM provides excellent linearity and efficiency in a lowcost surface mount package. The PFM18030SM includes two stages of amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the task of bias temperature compensation of the overall amplifier. The module includes RF input, interstage, and output matching elements. The source and load impedances required for optimum operation of the PFM18030SM are much higher (and simpler to realize) than for unmatched Si LDMOS transistors of similar performance.
The surface mount package base of PFM18030SM is typically soldered to a conventional PCB pad with an array of via holes for grounding and thermal sinking of the PFM18030SM. Optimized internal construction supports low FET channel temperature for reliable operation.