PF38F1030W0YUQE

The PF38F1030W0YUQE is designed as one kind of StrataFlash cellular memory that features flexible, multi-partition read-while-program and read-while-erase capability, enabling background programming or erasing in one partition simultaneously with code execution or data reads in another partition. And PF38F1030W0YUQE supports read operations at 1.8 V and erase and program operations at 1.8 V or 12 V, and allows I/O operation at voltages lower than the minimum VCCQ of 1.7 V.

Features of the PF38F1030W0YUQE are:(1)60 ns Initial access read speed;(2)Burst and Page mode reads in all Blocks, across all partition boundaries;(3)Enhanced Factory Programming at 3.1 s/ word;(4)Absolute Write Protection with VPP at ground;(5)100K Erase Cycles per Block;(6)Top or bottom parameter devices;(7)Parameter block size = 4-Kword;(8)Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible;(9)Standby current (130 nm): 8 A (typ.);(10)Read current: 8 mA (4-word burst, typ.).

The absolute maximum ratings of the PF38F1030W0YUQE can be summarized as:(1)Temperature under Bias Expanded:40 to +85 °C;(2)Storage Temperature: -65 to +125 °C;(3)Voltage on Any Pin (except VCC, VCCQ, VPP): -0.5 V to +2.45 V;(4)VPP Voltage:0.2 V to +13.1 V;(6)VCC and VCCQ Voltage: 0.2 V to +2.45 V;(8)Output Short Circuit Current: 100 mA.

The electrical characteristics of PF38F1030W0YUQE can be summarized as:(1)Input Load Current: ±1 A;(2)Output Leakage Current: ±1 A;(3)DPD: 2 to 30 A;(4)Average VCC Read: Asynchronous Single Word Read f = 5 MHz, (1 CLK): 25 to 30 mA;(5)VPP Read: 2 to 15 A;(6)VPP Program: 0.05 to 0.1 mA;(7)VPP Erase: 0.05 to 0.1 mA;(8)VPP Blank Check: 0.05 to 0.1 mA. If you want to know more information about PF38F1030W0YUQE, please download the datasheet in www.seekic.com or www.chinaicmart.com .