PF1003

PF1003,the MOS FET power amplifier module for GSM moble phone, PF1003 has three unique features: The first one is high speed switching which is 5 uA typ. The second one is low power control current which is 400 uA typ. The third one is wide power control range which is 90 dB typ.

There are some absolute maximum ratings about PF1003 when Tc is 25.Supply voltage(V_DD) is 17 V. Supply current(I_DD) is 3 A. APC voltage(V_APC) is ±8 V. Input power(Pin) is 20 mW. Operating case temperature is -40 to +100.Storage temperature(Tstg) is -45 to +125.Otherwise, there are also some electrical characteristics about it when Tc is 25. Drain cutoff current(I_DS) is 500 uA max when V_DD is 17 V, VAPC is 0 V.2nd harmonic distortion(2ndH.D.) is -40 dB typ and -30 dB max when Pin is 4 mW, V_DD is 12.5 V, Pout is 12 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.3rd harmonic distortion(3rd H.D.) is -50 dB typ and -40 dB max when Pin is 4 mW, V_DD is 12.5 V, Pout is 12 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.Input VSWR is 1.5 typ and 3 max when Pin is 4 mW, V_DD is 12.5 V, Pout is 12 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.Output power is 13.5 W min when Pin is 4 mW, V_DD is 12.5 V,RL is equal to Rg which is 50 ohms,VAPC is 7.5 V, Tc is 25.

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