PF0026

PE0026,the MOS FET power amplifier module for NMT900 handy phone,PE0026 has four unique features: The first one is surface mounted small package 1cc,3g with shielded cover. The second one is high efficiency which is 47% at actual output condition and 1.2 W. The third one is low voltage operation which is 6 V. The last one is low power control current which is 300 A.

There are some absolute maximum ratings about PE0026 when Ta is 25. Supply voltage(V_DD) is 12 V. Maximum circuiut current(I_D) is 2 A.APC voltage(V_APC) is ±8 V. Input power(Pin) is 20 mW.Operating case temperature(T_C(op) ) is -30 to +100. Storage temperature(T_stg) is -30 to +100.Otherwise, there are also some electrical charactersitics about it when Ta is 25. Drain cutoff current(I_DS) is 100 uA max when VDD is 12 V,Vapc is 12 V,Rg is equal to RL which is 50 ohms. Total efficiency is 43% min when Pin is 2 mW, V_DD is 6 V, Pout is 1.6 W(at APC control),Rg is equal to RL which is 50 ohms, f is 890,915MHz.2nd harmonic distortion(2nd H.D) is -30 dB max  when Pin is 2 mW, V_DD is 6 V, Pout is 1.6 W(at APC control),Rg is equal to RL which is 50 ohms, f is 890,915MHz.Input VSWR(VSWR_(in) ) is 3 typ  when Pin is 2 mW, V_DD is 6 V, Pout is 1.6 W(at APC control),Rg is equal to RL which is 50 ohms, f is 890,915MHz. Output power(Pout) is 2.0 W min  when Pin is 2 mW, V_DD is 6 V, Pout is 1.6 W(at APC control),Rg is equal to RL which is 50 ohms, f is 890,915MHz.

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