Features: SpecificationsDescriptionPE0025,the MOS FET power amplifier,has four unique features: The first one is surface mounted small package 1cc,3g with shielded cover. The second one is high efficiency which is 47% at actual output condition and 1.2 W. The third one is low voltage operation whi...
PF0025: Features: SpecificationsDescriptionPE0025,the MOS FET power amplifier,has four unique features: The first one is surface mounted small package 1cc,3g with shielded cover. The second one is high effi...
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PE0025,the MOS FET power amplifier,has four unique features: The first one is surface mounted small package 1cc,3g with shielded cover. The second one is high efficiency which is 47% at actual output condition and 1.2 W. The third one is low voltage operation which is 6 V. The last one is low power control current which is 300 A.
There are some absolute maximum ratings about PE0025 when Ta is 25. Supply voltage(VDD) is 12 V. Maximum circuiut current(ID) is 2 A.APC voltage(VAPC) is ±8 V. Input power(Pin) is 20 mW.Operating case temperature(TC(op) ) is -30 to +100. Storage temperature(Tstg) is -30 to +100.Otherwise, there are also some electrical charactersitics about it when Ta is 25. Drain cutoff current(IDS) is 100 uA max when VDD is 12 V(1,2,3),Vapc is 0 V,Rg is equal to RL which is 50 ohms. Total efficiency is 43% min when Pin is 2 mW, VDD is 6 V, Pout is 1.2 W(at APC control),Rg is equal to RL which is 50 ohms, f is 824,849 MHz.2nd harmonic distortion(2nd H.D) is -30 dB max when Pin is 2 mW, VDD is 6 V, Pout is 1.2 W(at APC control),Rg is equal to RL which is 50 ohms, f is 824,849 MHz.Input VSWR(VSWR(in) ) is 3 typ when Pin is 2 mW, VDD is 6 V, Pout is 1.2 W(at APC control),Rg is equal to RL which is 50 ohms, f is 824,849 MHz.Output VSWR(VSWR(out) ) is 1.6 min when Pin is 2 mW, VDD is 6 V, Pout is 1.2 W(at APC control),Rg is equal to RL which is 50 ohms, f is 824,849 MHz.
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