Features: ESD protection of up to four lines Very low diode capacitance Low clamping voltageUltra low leakage current: IRM = 3 nAESD protection up to 12 kVIEC 61000-4-2; level 4 (ESD)ApplicationComputers and peripherals Audio and video equipment Cellular handsets and accessories Communication sys...
PESD3V3V4UG: Features: ESD protection of up to four lines Very low diode capacitance Low clamping voltageUltra low leakage current: IRM = 3 nAESD protection up to 12 kVIEC 61000-4-2; level 4 (ESD)ApplicationCom...
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1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
Symbol | Parameter | Parameter |
Min |
Typ |
Max |
Unit |
VRWM | reverse stand-off voltage | |||||
PESD3V3V4UG |
. |
. |
3.3 |
V | ||
PESD5V0V4UG |
. |
. |
5.0 |
V | ||
Cd |
diode capacitance | f = 1 MHz; VR =0V;see R Figure 5 | ||||
PESD3V3V4UG |
. |
15 |
18 |
pF | ||
PESD5V0V4UG |
. |
12 |
15 |
pF |