PEMZ7

Features: · 300 mW total power dissipation· Very small 1.6 ×1.2 mm ultra thin package· Self alignment during soldering due to straight leads· Low collector capacitance· Low VCEsat· High current capabilities· Improved thermal behaviour due to flat leads· Reduced required PCB area· Reduced pick and ...

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PEMZ7 Picture
SeekIC No. : 004459541 Detail

PEMZ7: Features: · 300 mW total power dissipation· Very small 1.6 ×1.2 mm ultra thin package· Self alignment during soldering due to straight leads· Low collector capacitance· Low VCEsat· High current capa...

floor Price/Ceiling Price

Part Number:
PEMZ7
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

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Product Details

Description



Features:

· 300 mW total power dissipation
· Very small 1.6 ×1.2 mm ultra thin package
· Self alignment during soldering due to straight leads
· Low collector capacitance
· Low VCEsat
· High current capabilities
· Improved thermal behaviour due to flat leads
· Reduced required PCB area
· Reduced pick and place costs.



Application

· Heavy duty battery powered equipment (automotive, telecom and audio-video) such as motor and lamp drivers
· VCEsat critical applications such as latest low supply voltage IC applications
· All battery driven equipment, to save battery power.



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage
open emitter
-
15
V
VCEO collector-emitter voltage
open base
-
12
V
VEBO emitter-base voltage
open collector
-
6
V
IC collector current (DC)
-
500
mA
ICM peak collector current
-
1
A
IBM peak base current
-
100
mA
Ptot total power dissipation
Tamb 25 °C; note 1
-
200
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
150
°C
Tamb operating ambient temperature
-65
+150
°C
Per device
Ptot total power dissipation
Tamb25 °C; note 1
-
300
mW
Note
1. Transistor mounted on an FR4 printed-circuit board.



Description

NPN/PNP low VCEsat transistor PEMZ7 pair in a SOT666 plastic package.


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