Features: · 300 mW total power dissipation· Very small 1.6 ×1.2 mm ultra thin package· Self alignment during soldering due to straight leads· Low collector capacitance· Low VCEsat· High current capabilities· Improved thermal behaviour due to flat leads· Reduced required PCB area· Reduced pick and ...
PEMZ7: Features: · 300 mW total power dissipation· Very small 1.6 ×1.2 mm ultra thin package· Self alignment during soldering due to straight leads· Low collector capacitance· Low VCEsat· High current capa...
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SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
15 |
V |
VCEO | collector-emitter voltage |
open base |
- |
12 |
V |
VEBO | emitter-base voltage |
open collector |
- |
6 |
V |
IC | collector current (DC) |
- |
500 |
mA | |
ICM | peak collector current |
- |
1 |
A | |
IBM | peak base current |
- |
100 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C; note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C; note 1 |
- |
300 |
mW |