PEMH4

Features: · 300 mW total power dissipation· Very small 1.6 mm×1.2 mm ×0.55 mm ultra thin package· Excellent coplanarity due to straight leads· Reduces number of components as replacement of two SC-75/SC-89 packaged transistors· Reduces required board space· Reduces pick and place costs.Application...

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PEMH4 Picture
SeekIC No. : 004459535 Detail

PEMH4: Features: · 300 mW total power dissipation· Very small 1.6 mm×1.2 mm ×0.55 mm ultra thin package· Excellent coplanarity due to straight leads· Reduces number of components as replacement of two SC-7...

floor Price/Ceiling Price

Part Number:
PEMH4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/25

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Product Details

Description



Features:

· 300 mW total power dissipation
· Very small 1.6 mm×1.2 mm ×0.55 mm ultra thin package
· Excellent coplanarity due to straight leads
· Reduces number of components as replacement of two SC-75/SC-89 packaged transistors
· Reduces required board space
· Reduces pick and place costs.



Application

· General purpose switching and amplification
· Inverter and interface circuits
· Circuit driver.



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
VCBO collector-base voltage
open emitter
-
50
V
VCEO collector-emitter voltage
open base
-
50
V
VEBO emitter-base voltage
open collector
-
5
V
IC collector current (DC)
-
100
mA
ICM peak collector current
-
100
mA
Ptot total power dissipation
Tamb 25 °C; note 1
-
200
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
150
°C
Tamb operating ambient temperature
-65
+150
°C
Per device
Ptot total power dissipation
Tamb 25 °C; note 1
-
300
mW

Note
1. Transistor mounted on an FR4 printed-circuit board.



Description

NPN resistor-equipped double transistor PEMH4 in a SOT666 plastic package.


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