Features: · Built-in bias resistors· Simplified circuit design· Reduction of component count· Reduced pick and place costs.Application· Low current peripheral driver· Replacement of general purpose transistors in digital applications· Control of IC inputs.PinoutSpecifications SYMBOL PAR...
PEMH10: Features: · Built-in bias resistors· Simplified circuit design· Reduction of component count· Reduced pick and place costs.Application· Low current peripheral driver· Replacement of general purpose ...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor | |||||
VCBO | collector-base voltage |
open emitter |
- |
50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
50 |
V |
VEBO | emitter-base voltage |
open collector |
- |
10 |
V |
Vi | input voltage positive negative |
- - |
+12 -5 |
V V | |
IO | output current (DC) |
- |
100 |
mA | |
ICM | peak collector current |
- |
100 |
mA | |
Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C note 1 notes 1 and 2 |
- - |
200 200 |
mW mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C note 1 notes 1 and 2 |
- - |
300 300 |
mW mW |