Features: ·Built-in bias resistors·Simplifies circuit design·Reduces component count·Reduces pick and place costApplication·Low current peripheral driver·Control of IC inputs·Replacement of general-purpose transistors in digital applicationsPinoutSpecifications SYMBOL PARAMETER CONDITIO...
PEMB14: Features: ·Built-in bias resistors·Simplifies circuit design·Reduces component count·Reduces pick and place costApplication·Low current peripheral driver·Control of IC inputs·Replacement of general-...
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SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT | |
Per transistor; for the PNP transistor with negative polarity | ||||||
VCBO | collector-base voltage |
open emitter |
- |
-50 |
V | |
VCEO | collector-emitter voltage |
open base |
- |
-50 |
V | |
VEBO | emitter-base voltage |
open collector |
- |
-5 |
V | |
IC | collector current (DC) |
- |
-100 |
mA | ||
ICM | peak collector current |
- |
-100 |
MA | ||
IBM | peak base current |
- |
100 |
mA | ||
Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C |
[1] [1] [2] |
- - |
200 200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | ||
Tj | junction temperature |
- |
150 |
°C | ||
Tamb | operating ambient temperature |
-65 |
+150 |
°C | ||
Per device | ||||||
Ptot | total power dissipation SOT363 SOT666 |
Tamb25 °C |
[1] [1] [2] |
- - |
300 300 |
mW MW |