PE9701

Features: • 3.0 GHz operation• ÷10/11 dual modulus prescaler• Internal phase detector with charge pump• Serial, parallel or hardwiredprogrammable• Ultra-low phase noise• SEU < 10-9 errors / bit-day• 100 Krad (Si) total dose• 44-lead CQFJPinoutSpec...

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PE9701 Picture
SeekIC No. : 004457945 Detail

PE9701: Features: • 3.0 GHz operation• ÷10/11 dual modulus prescaler• Internal phase detector with charge pump• Serial, parallel or hardwiredprogrammable• Ultra-low phase noise...

floor Price/Ceiling Price

Part Number:
PE9701
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 3.0 GHz operation
• ÷10/11 dual modulus prescaler
• Internal phase detector with charge pump
• Serial, parallel or hardwired
programmable
• Ultra-low phase noise
• SEU < 10-9 errors / bit-day
• 100 Krad (Si) total dose
• 44-lead CQFJ





Pinout

  Connection Diagram




Specifications

Symbol Parameter/Conditions Min Max Units
VDD Supply voltage -0.3 4.0 V
VI Voltage on any input -0.3 VDD +
0.3
V
II DC into any input -10 +10 mA
IO DC into any output -10 +10 mA
TST Storage temperature range -65 150 °C





Description

Peregrine's PE9701 is a high-performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The PE9701 is designed for superior phase noise performance while providing an order of magnitude reduction in current consumption, when compared with existing commercial space PLLs.

The PE9701 features a 10/11 dual modulus prescaler, counters, and a phase comparator as shown in Figure 1. Counter values are programmable through either a serial or parallel interface and can also be directly hard wired.

The PE9701 is optimized for commercial space applications. Single Event Latch up (SEL) is physically impossible and Single Event Upset (SEU) is better than 10-9 errors per bit / day. PE9701 is manufactured on Peregrine's UltraCMOS™ process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering excellent RF performance and intrinsic radiation tolerance.






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