Features: • Single +3.0-volt Power Supply• Low Insertion loss: 0.70 dB up to 2.0 GHz• High isolation of 39 dB at 1.0 GHz, 28 dB at 2.0 GHz, typical• Typical 1 dB compression of +27 dBm• Single-pin CMOS logic control• Packaged in 8-lead MSOPPinoutSpecifications ...
PE84244: Features: • Single +3.0-volt Power Supply• Low Insertion loss: 0.70 dB up to 2.0 GHz• High isolation of 39 dB at 1.0 GHz, 28 dB at 2.0 GHz, typical• Typical 1 dB compression ...
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Symbol | Parameter/Conditions | Min | Max | Units |
VDD | Power supply voltage | -0.3 | 4.0 | V |
VI | Voltage on any input | -0.3 | VDD+0.3 | V |
TST | Storage temperature range | -65 | 150 | |
TOP | Operating temperature range | -55 | 125 | |
PIN | Input power (50) | 30 | dBm | |
VESD | ESD voltage (Human Body Model) | 1500 | V |
The PE84244 MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This switch integrates on-board CMOS control logic with a low voltage CMOS compatible control input. Using a +3-volt nominal power supply voltage, a 1 dB compression point of +27 dBm can be achieved. The PE84244 also exhibits excellent isolation of 28 dB at 2.0 GHz and is offered in a small 8-lead MSOP package.
The PE4244 MOSFET RF PE84244 Switch is manufactured in Peregrine's patented Ultra Thin Silicon (UTSi) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.