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PE4302-EK

Features: • Attenuation: 0.5 dB steps to 31.5 dB• Flexible parallel and serial programming interfaces• Unique power-up state selection• Positive CMOS control logic• High attenuation accuracy and linearity over temperature and frequency• Very low power consumptio...

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SeekIC No. : 004457845 Detail

PE4302-EK: Features: • Attenuation: 0.5 dB steps to 31.5 dB• Flexible parallel and serial programming interfaces• Unique power-up state selection• Positive CMOS control logic• Hig...

PE4302-EK Data Sheet

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Part Number:
PE4302-EK
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Attenuation: 0.5 dB steps to 31.5 dB
• Flexible parallel and serial programming interfaces
• Unique power-up state selection
• Positive CMOS control logic
• High attenuation accuracy and linearity
  over temperature and frequency
• Very low power consumption
• Single-supply operation
• 50 impedance
• Packaged in a 20 lead 4x4mm QFN


Pinout

Connection Diagram


Specifications

Symbol Parameter/Conditions Min Max Units
VDD Supply voltage -0.3 4.0 V
VI Voltage on any input -0.3 VDD+
0.3		 V
TST Storage temperature range -65 150 °C
TOP Operating temperature range -40 85 °C
VESD ESD voltage (Human Body Model)   500 V
PIN Maximum input power 24 dBm



Description

The PE4302 is a high linearity, 6-bit RF Digital Step Attenuator "DSA" covering a 31.5 dB attenuation range in 0.5 dB steps. This 50-ohm RF DSA provides both parallel and serialCMOS control interface operates on a single 3-volt supply and maintains high attenuation accuracy over frequency and temperature. PE4302 also has a unique control interface that allows the user to select an initial attenuation state at power-up. The PE4302 exhibits very low insertion loss and low power consumption. This functionality is delivered in a 4x4mm QFN footprint.

The PE4302 is manufactured in Peregrine's patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.




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