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PDTD123YK,115: TRANS NPN W/RES 50V SC-59

PDTD123YK,115 Data Sheet

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Part Number:: PDTD123YK,115
Mfg:
Supply Ability:: 5000

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Upload time: 2024/5/30

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Product Details

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Series:	-	Manufacturer:	NXP Semiconductors
Transistor Type:	NPN - Pre-Biased	Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V	Resistor - Base (R1) (Ohms):	2.2k
Capacitance :	0.7 pF	Resistor - Emitter Base (R2) (Ohms):	10k
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA	Frequency - Transition:	-
Power - Max:	250mW	Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3	Supplier Device Package:	SMT3

Description

Series: -
Manufacturer: NXP Semiconductors
Transistor Type: NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Power - Max: 250mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Resistor - Emitter Base (R2) (Ohms): 10k
Supplier Device Package: SMT3
Resistor - Base (R1) (Ohms): 2.2k
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA

Parameters:

Technical/Catalog Information	PDTD123YK,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Power - Max	250mW
Resistor - Base (R1) (Ohms)	2.2K
Resistor - Emitter Base (R2) (Ohms)	10K
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 5V
Frequency - Transition	-
Mounting Type	Surface Mount
Package / Case	SC-59-3, SMT3, SOT-346, TO-236
Packaging	Tape & Reel (TR)
Drawing Number	568; SOT346; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PDTD123YK,115 PDTD123YK,115

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