PDTD123TS,126

Series: -
Manufacturer: NXP Semiconductors
Transistor Type: NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Resistor - Base (R1) (Ohms): 2.2k
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 500mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Mounting Type: Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Power - Max: 500mW


Parameters:

Technical/Catalog Information	PDTD123TS,126
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Power - Max	500mW
Resistor - Base (R1) (Ohms)	2.2K
Resistor - Emitter Base (R2) (Ohms)	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Frequency - Transition	-
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Tape & Box (TB)
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PDTD123TS,126 PDTD123TS,126