PDTD123TK,115

Series: -
Manufacturer: NXP Semiconductors
Transistor Type: NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Power - Max: 250mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Resistor - Base (R1) (Ohms): 2.2k
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 500mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V


Parameters:

Technical/Catalog Information	PDTD123TK,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Power - Max	250mW
Resistor - Base (R1) (Ohms)	2.2K
Resistor - Emitter Base (R2) (Ohms)	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Frequency - Transition	-
Mounting Type	Surface Mount
Package / Case	SC-59-3, SMT3, SOT-346, TO-236
Packaging	Tape & Reel (TR)
Drawing Number	568; SOT346; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PDTD123TK,115 PDTD123TK,115