PDTA143ES

Features: ` Built-in bias resistors R1 and R2 (typ. 4.7 k each)` Simplification of circuit design` Reduces number of components and board space.Application· Especially suitable for space reduction in interface and driver circuits· Inverter circuit configurations without use of external resistors.S...

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PDTA143ES Picture
SeekIC No. : 004457561 Detail

PDTA143ES: Features: ` Built-in bias resistors R1 and R2 (typ. 4.7 k each)` Simplification of circuit design` Reduces number of components and board space.Application· Especially suitable for space reduction i...

floor Price/Ceiling Price

Part Number:
PDTA143ES
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

` Built-in bias resistors R1 and R2 (typ. 4.7 k each)
` Simplification of circuit design
` Reduces number of components and board space.



Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.



Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -50 V
VCEO collector-emitter voltage open base - -50 V
VEBO emitter-base voltage open collector - -10 V
VI input voltage
positive
negative
-
-

+10
-30

V
V
IO output current (DC) - -100 mA
ICM peak collector current - -100 mA
Ptot total power dissipation Tamb 25 ; note 1 - 500 mW
Tstg storage temperature -65 150
Tj junction temperature - 150
Tamb operating ambient temperature -65 150

Note
1. Transistor mounted on an FR4 printed-circuit board.



Description

PNP resistor-equipped transistor in a TO-92; SOT54 plastic package.

NPN complement: PDTA143ES.


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