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PDTA143EE

Features: · Built-in bias resistors R1 and R2 (typ. 4.7 kW each)· Simplification of circuit design· Reduces number of components and board space.Application· Especially suitable for space reduction in interface and driver circuits· Inverter circuit configurations without use of external resistors....

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PDTA143EE: Features: · Built-in bias resistors R1 and R2 (typ. 4.7 kW each)· Simplification of circuit design· Reduces number of components and board space.Application· Especially suitable for space reduction ...

PDTA143EE Data Sheet

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Part Number:
PDTA143EE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Built-in bias resistors R1 and R2 (typ. 4.7 kW each)
· Simplification of circuit design
· Reduces number of components and board space.


Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -50 V
VCEO collector-emitter voltage open base - -50 V
VEBO emitter-base voltage open collector - -10 V
VI input voltage
positive
negative		 -
-

+10
-30

 V
V
IO output current (DC) - -100 mA
ICM peak collector current - -100 mA
Ptot total power dissipation Tamb 25 ; note 1 - 150 mW
Tstg storage temperature -65 +150
Tj junction temperature - 150
Tamb operating ambient temperature -65 +150

Note
1. Transistor mounted on an FR4 printed-circuit board.


Description

PNP resistor-equipped transistor in an SC-75 plastic package.

NPN complement: PDTA143EE.


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