PDTA123JS,126

Series: -
Manufacturer: NXP Semiconductors
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Transistor Type: PNP - Pre-Biased
Resistor - Emitter Base (R2) (Ohms): 47k
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Resistor - Base (R1) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Power - Max: 500mW


Parameters:

Technical/Catalog Information	PDTA123JS,126
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	PNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Power - Max	500mW
Resistor - Base (R1) (Ohms)	2.2K
Resistor - Emitter Base (R2) (Ohms)	47K
Vce Saturation (Max) @ Ib, Ic	100mV @ 250A, 5mA
Current - Collector Cutoff (Max)	1A
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Frequency - Transition	-
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Tape & Box (TB)
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PDTA123JS,126 PDTA123JS,126