PDTA115EK,115

Series: -
Manufacturer: NXP Semiconductors
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Power - Max: 250mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Resistor - Base (R1) (Ohms): 100k
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Packaging: Cut Tape (CT)
Current - Collector (Ic) (Max): 20mA
Resistor - Emitter Base (R2) (Ohms): 100k


Parameters:

Technical/Catalog Information	PDTA115EK,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	PNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	20mA
Power - Max	250mW
Resistor - Base (R1) (Ohms)	100K
Resistor - Emitter Base (R2) (Ohms)	100K
Vce Saturation (Max) @ Ib, Ic	150mV @ 250A, 5mA
Current - Collector Cutoff (Max)	1A
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 5V
Frequency - Transition	-
Mounting Type	Surface Mount
Package / Case	SC-59-3, SMT3, SOT-346, TO-236
Packaging	Tape & Reel (TR)
Drawing Number	568; SOT346; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PDTA115EK,115 PDTA115EK,115 568 2107 2 ND 56821072ND 568-2107-2