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PDTA114YT

Features: • Built-in bias resistors R1 and R2(typ. 10 kΩ and 47 kΩ respectively)• Simplification of circuit design• Reduces number of componentsand board space.Application• Especially suitable for spacereduction in interface and drivercircuits• Inverter ci...

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PDTA114YT: Features: • Built-in bias resistors R1 and R2(typ. 10 kΩ and 47 kΩ respectively)• Simplification of circuit design• Reduces number of componentsand board space.Applicat...

PDTA114YT Data Sheet

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Part Number:
PDTA114YT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Built-in bias resistors R1 and R2(typ. 10 kΩ and 47 kΩ respectively)
• Simplification of circuit design
• Reduces number of componentsand board space.


Application

• Especially suitable for spacereduction in interface and drivercircuits
• Inverter circuit configurationswithout use of external resistors.


Pinout

Connection Diagram Connection Diagram


Specifications

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−50

V

VCEO

collector-emitter voltage

open base

-

−50

V

VEBO

emitter-base voltage

open collector

-

-10

V

VI

input voltage
positive
negative

 

-

6
-40

V
V

IO

output current (DC)

 

-

-100

mA

IICM

peak collector current

 

-

-100

mA

Ptot

total power dissipation

Tamb 25 °C; note 1

-

250

W

Tstg

storage temperature

 

-65

   +150

°C

Tj

junction temperature

 

-

     150

°C

Tamb operating ambient temperature   -65    +150 °C



Description

PDTA114YT PNP resistor-equipped transistor in aSOT23 plastic package.


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