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PDTA114TE

Features: • Built-in bias resistor R1 (typ. 10 kΩ)• Simplification of circuit design• Reduces number of componentsand board space.Application• Especially suitable for spacereduction in interface and drivercircuit applications• Inverter circuit configurationswith...

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PDTA114TE: Features: • Built-in bias resistor R1 (typ. 10 kΩ)• Simplification of circuit design• Reduces number of componentsand board space.Application• Especially suitable for s...

PDTA114TE Data Sheet

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Part Number:
PDTA114TE
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Built-in bias resistor R1 (typ. 10 kΩ)
• Simplification of circuit design
• Reduces number of componentsand board space.


Application

• Especially suitable for spacereduction in interface and drivercircuit applications
• Inverter circuit configurationswithout use of an external resistor.


Pinout

Connection Diagram Connection Diagram


Specifications

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−50

V

VCEO

collector-emitter voltage

open base

-

−50

V

VEBO

emitter-base voltage

open collector

-

-10

V

IO

output current (DC)

 

-

-100

mA

IICM

peak collector current

 

-

-100

mA

Ptot

total power dissipation

Tamb 25 °C; note 1

-

250

W

Tstg

storage temperature

 

-65

   +150

°C

Tj

junction temperature

 

-

     150

°C

Tamb

operating ambient temperature

 

-65

   +150

°C




Description

PDTA114TE PNP resistor-equipped transistor inan SC-75 plastic package.NPN complement: PDTC114TE.


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