Position: Home  > All Categories> Integrated Circuits (ICs) > PDTA114EEF

PDTA114EEF

Features: *Power dissipation comparable to SOT23*Built-in bias resistors R1 and R2 (typ. 10 kΩ each)*Simplification of circuit design*Reduces number of components and board space.Application*Especially suitable for space reduction in interface and driver circuits*nverter circuit configuratio...

product image

PDTA114EEF Picture
See larger image
SeekIC No. : 004457538 Detail

PDTA114EEF: Features: *Power dissipation comparable to SOT23*Built-in bias resistors R1 and R2 (typ. 10 kΩ each)*Simplification of circuit design*Reduces number of components and board space.Application*E...

PDTA114EEF Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PDTA114EEF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

*Power dissipation comparable to SOT23
*Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
*Simplification of circuit design
*Reduces number of components and board space.


Application

*Especially suitable for space reduction in interface and driver circuits
*nverter circuit configurations without use of external resistors.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − -50 V
VCEO collector-emitter voltage open base − -50 V
VEBO emitter-base voltage open collector − -10 V
VI input voltage
positive
negative		   −

+10

-40

 V
V
IO output current (DC)   − -100 mA
ICM peak collector current   − -100 mA
Ptot

total power dissipation

 Tamb 25 °C note 1
 −

250

 mW
Tstg storage temperature   −65 +150 °C
Tj junction temperature   − 150 °C
Tamb operating ambient temperature   −65 +150 °C



Description

PDTA114EEF PNP resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complement: PDTC114EEF.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Prototyping Products
AVT4168
DE1
Switches
US32DMRJ
HBGQ22P-11ET
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
View more