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PDTA114EE

Features: • Built-in bias resistors R1 and R2(typ. 10 kΩ each)• Simplification of circuit design• Reduces number of componentsand board spaceApplication• Especially suitable for spacereduction in interface and drivercircuits• Inverter circuit configurationswitho...

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PDTA114EE: Features: • Built-in bias resistors R1 and R2(typ. 10 kΩ each)• Simplification of circuit design• Reduces number of componentsand board spaceApplication• Especially sui...

PDTA114EE Data Sheet

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Part Number:
PDTA114EE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Built-in bias resistors R1 and R2(typ. 10 kΩ each)
• Simplification of circuit design
• Reduces number of componentsand board space


Application

• Especially suitable for spacereduction in interface and drivercircuits
• Inverter circuit configurationswithout use of external resistors.


Pinout

Connection Diagram Connection Diagram


Specifications

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−50

V

VCEO

collector-emitter voltage

open base

-

−50

V

VEBO

emitter-base voltage

open collector

-

-10

V

VI

input voltage
positive
negative

 

-

+10
-40

V
V

IO

output current (DC)

 

-

-100

mA

IICM

peak collector current

 

-

-100

mA

Ptot

total power dissipation

Tamb 25 °C; note 1

-

150

W

Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb operating ambient temperature   -65 +150 °C



Description

PDTA114EE PNP resistor-equipped transistor inan SC-75 plastic package.NPN complement: PDTC114EE.


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