SpecificationsDescriptionThe PDMB200E6 is designed as one kind of IGBT device that has some points of absolute maximum ratings:(1)Collector-Emitter Voltage: 600 V;(2)Gate-Emitter Voltage: ±20 V;(3)Collector Current: 200 or 400 A;(4)Forward Current: 200 or 400 A;(5)Collector Power Dissipation: 780 ...
PDMB200E6: SpecificationsDescriptionThe PDMB200E6 is designed as one kind of IGBT device that has some points of absolute maximum ratings:(1)Collector-Emitter Voltage: 600 V;(2)Gate-Emitter Voltage: ±20 V;(3)C...
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The PDMB200E6 is designed as one kind of IGBT device that has some points of absolute maximum ratings:(1)Collector-Emitter Voltage: 600 V;(2)Gate-Emitter Voltage: ±20 V;(3)Collector Current: 200 or 400 A;(4)Forward Current: 200 or 400 A;(5)Collector Power Dissipation: 780 W;(6)Junction Temperature Range: -40 to +150 ;(7)Storage Temperature Range: -40 to +125 ;(8)Isolation Voltage(Terminal to Base, AC1min.): 2500 V;(9)Mounting Torque: 2 or 3 N.m.
The electrical characteristics of the PDMB200E6 can be summarized as:(1)Collector-Emitter Cut-Off Current: 1.0 mA;(2)Gate-Emitter Leakage Current: 1.0 A;(3)Collector-Emitter Saturation Voltage: 2.1 to 2.6 V;(4)Gate-Emitter Threshold Voltage: 4.0 to 8.0 V;(5)Input Capacitance: 10000 pF;(6)Switching Time: 0.15 to 0.70 s. If you want to know more information about the PDMB200E6, please download the datasheet in www.seekic.com or www.chinaicmart.com .