Features: · Dual MOS FETs Cascaded Circuit · Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel · 300KHz High Speed Switching PossibleTYPICAL APPLICATIONS · Power Supply for the Communications andthe Induction Heating Specifications Ratings Sy...
PDM505HC: Features: · Dual MOS FETs Cascaded Circuit · Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel · 300KHz High Speed Switching PossibleTYPICAL APPLICATIONS...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
· Dual MOS FETs Cascaded Circuit
· Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel
· 300KHz High Speed Switching Possible TYPICAL APPLICATIONS
· Power Supply for the Communications and the Induction Heating
Ratings |
Symbol |
PDM505HA |
Unit | |
Drain-Source Voltage (VGS=0V) |
VDSS |
500 |
V | |
Gate - Source Voltage |
VGSS |
+/ - 20 |
V | |
Continuous Drain Current | Duty=50% |
ID |
50 (Tc=25) |
A |
D.C. |
35 (Tc=25) | |||
Pulsed Drain Current |
IDM |
100 Tc=25) |
A | |
Total Power Dissipation |
PD |
350 Tc=25) |
W | |
Operating Junction Temperature Range |
Tjw |
-40 to +150 |
||
Storage Temperature Range |
Tstg |
-40 to +125 |
| |
Isolation Voltage Terminals to Base AC, 1 min.) |
VISO |
2000 |
V | |
Mounting Torque | Module Base to Heatsink |
FTOR |
3.0 |
N*m |
Bus Bar to Main Terminals |
2.0 |