Features: SpecificationsDescriptionThe PDC16UV6484-103T-S is a high performance,128-megabyte synchronous,dynamic RAM module organized as 16M words by 72 bits, in a 168-pin,dual-in-line memory module(DIMM)package.The modules utilize sixteen Fujitsu MB81F64842B-103FN CMOS 8M*8 synchronous dynamic RA...
PDC16UV6484-103T-S: Features: SpecificationsDescriptionThe PDC16UV6484-103T-S is a high performance,128-megabyte synchronous,dynamic RAM module organized as 16M words by 72 bits, in a 168-pin,dual-in-line memory module...
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Features: SpecificationsDescriptionThe PDC1211-52 of receivers offer wide dynamic range performanc...
Features: SpecificationsDescriptionThe PDC16UV7284-103T-S is a high performance,128-megabyte synch...
The PDC16UV6484-103T-S is a high performance,128-megabyte synchronous,dynamic RAM module organized as 16M words by 72 bits, in a 168-pin,dual-in-line memory module(DIMM)package.The modules utilize sixteen Fujitsu MB81F64842B-103FN CMOS 8M*8 synchronous dynamic RAMs in surface mount package(TSOP) on an epoxy laminated substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.It has many unique features: The first one is high density which is 128M bytes. The second one is LVTTL-compatible inputs and outputs. The third one is seperate power and ground planes to improve noise immunity. The forth one is single power supply of 3.3 V(0.3 V more or less). The fifth one is height is 1.375 inch,etc.
There are some absolute maximum ratings about PDC16UV6484-103T-S.Voltage on any pin relative to Vss(VT) is -0.5 V to +4.6 V. Power dissipation(PT) is 16.0 W. Operating temperature(Topr) is 0 to 70.Storage temperature(Tstg) is -55 to +125.Short circuit output current(IOS) is ±50 mA.Otherwise, there are also some recommended DC operating conditions about it(Ta is 0 to 70).Supply voltage(Vcc) is 3.0 Vmin,3.3 V typ and 3.6 V max. Ground(Vss) is 0 V. Input high voltage(VIH) is 2.0 V min and Vcc+0.5 V max. Input low voltage(Vil) is -0.5 V min and 0.8 V max.
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