Transistors RF MOSFET Power POWER R.F. N-Ch Trans
PD85035STR-E: Transistors RF MOSFET Power POWER R.F. N-Ch Trans
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1 GHz | Gain : | 14.9 dB at 870 MHz |
Output Power : | 35 W | Drain-Source Breakdown Voltage : | 40 V |
Continuous Drain Current : | 8 A | Gate-Source Breakdown Voltage : | 15 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | PowerSO-10RF (Straight Lead) |
Packaging : | Reel |
Technical/Catalog Information | PD85035STR-E |
Vendor | STMicroelectronics |
Category | Undefined Category |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PD85035STR E PD85035STRE |