Transistors RF MOSFET Power RF Power Transistor LdmoST N-ch Plastic
PD84006-E: Transistors RF MOSFET Power RF Power Transistor LdmoST N-ch Plastic
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Transistors RF MOSFET Power RF power trans LDmoST plastic
Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1 GHz | Gain : | 13 dB at 870 MHz |
Output Power : | 6 W | Drain-Source Breakdown Voltage : | 25 V |
Continuous Drain Current : | 5 A | Gate-Source Breakdown Voltage : | 15 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | PowerSO-10RF (Formed Lead) |
Packaging : | Tube |