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PD60030S

Features: • EXCELLENT THERMAL STABILITY• COMMON SOURCE CONFIGURATION• POUT = 30 W with 10 dB gain @ 2000 MHzSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ±20 V ID Drain Current...

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SeekIC No. : 004457243 Detail

PD60030S: Features: • EXCELLENT THERMAL STABILITY• COMMON SOURCE CONFIGURATION• POUT = 30 W with 10 dB gain @ 2000 MHzSpecifications Symbol Parameter Value Unit V(BR)D...

PD60030S Data Sheet

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Part Number:
PD60030S
Supply Ability:
5000

Price Break

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 10 dB gain @ 2000 MHz


Specifications

Symbol
Parameter
Value
Unit
V(BR)DSS
 Drain-Source Voltage
65
V
VGS
 Gate-Source Voltage
±20
V
ID
 Drain Current
TBD
A
PDISS
 Power Dissipation (@ Tc = 70°C)
TBD
W
Tstg
 Storage temperature
-65to175
°C
Tj
 Max. operating junction temperature
165
°C



Description

The PD60030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies of up to 2 GHz. PD60030S boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD60030S's superior linearity performance makes it an ideal solution for base station applications.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. PD60030S has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.




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