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PD20010STR-E

Transistors RF MOSFET Power RF power tran LdmoST N-chann

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SeekIC No. : 00219815 Detail

PD20010STR-E: Transistors RF MOSFET Power RF power tran LdmoST N-chann

PD20010STR-E Data Sheet

floor Price/Ceiling Price

US $ 6.58~6.92 / Piece | Get Latest Price
Part Number:
PD20010STR-E
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~451
  • 451~600
  • Unit Price
  • $6.92
  • $6.58
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2 GHz Gain : 11 dB
Output Power : 10 W Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 5 A Gate-Source Breakdown Voltage : 15 V
Maximum Operating Temperature : + 150 C Package / Case : PowerSO-10RF (Straight Lead)
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gate-Source Breakdown Voltage : 15 V
Drain-Source Breakdown Voltage : 40 V
Frequency : 2 GHz
Package / Case : PowerSO-10RF (Straight Lead)
Continuous Drain Current : 5 A
Gain : 11 dB
Output Power : 10 W


Parameters:

Technical/Catalog InformationPD20010STR-E
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeLDMOS
Voltage - Rated 40V
Current Rating5A
Package / Case*
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PD20010STR E
PD20010STRE



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