PCX8582X-2

` Low power CMOS maximum active current 2.0 mA maximum standby current 10 mA (at 6.0 V), typical 4 mA
` Non-volatile storage of 2-Kbits organized as 256 ´ 8-bits
` Single supply with full operation down to 2.5 V
` On-chip voltage multiplier
` Serial input/output I2C-bus
` Write operations byte write mode 8-byte page write mode (minimizes total write time per byte)
` Read operations sequential read random read
` Internal timer for writing (no external components)
` Power-on reset
` High reliability by using a redundant storage code
` Endurance >500 k E/W-cycles at Tamb = 22 °C
` 40 years non-volatile data retention time (typ.)
` Pin and address compatible to PCX8570, PCF8571, PCF8572 and PCF8581 PCX8494X-2, PCX8598X-2 -Family.

The PCX8582X-2 is a 2-Kbit (256 ´ 8-bit) floating gate electrically erasable programmable read only memory (EEPROM). By using an internal redundant storage code it is fault tolerant to single bit errors. This feature dramatically increases reliability compared to conventional EEPROM memories.

Power consumption of PCX8582X-2 is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier.

As data bytes of PCX8582X-2 are received and transmitted via the serial I2C-bus, a package using eight pins is sufficient. Up to eight PCX8582X-2 devices may be connected to the I2C-bus. Chip select is accomplished by three address inputs (A0, A1, A2).

Timing of the ERASE/WRITE cycle of PCX8582X-2 is carried out internally, thus no external components are required. Pin 7 (PTC) must be connected to either VDD or left open-circuit. There is an option of using an external clock for timing the length of an ERASE/WRITE cycle.