PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIF(AV)IFRMI2tIFSMIRRMTjTstg Repetitive peak reverse voltageCrest working reverse voltageContinuous reverse voltageOutput current (both diodesconducting)1RMS forward currentRepetitive peak forward currentper dio...
PBYR3045PTF: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIF(AV)IFRMI2tIFSMIRRMTjTstg Repetitive peak reverse voltageCrest working reverse voltageContinuous reverse vol...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | ||
VRRM VRWM VR IF(AV) IFRM I2t IFSM IRRM Tj Tstg |
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Repetitive peak reverse current per diode. Non-repetitive peak reverse current per diode. Storage temperature Operating junction temperature |
Tmb 113 °C square wave; = 0.5; Tmb 109°C t = 25 ms; = 0.5; Tmb 130 °C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 °C prior to surge; with reapplied VRWM(max) t = 10 s tp = 2 s; = 0.001 tp = 100 s |
- - - - - - - - - - - -65 - |
-35 35 35 35 |
-40 40 40 40 |
-45 45 45 45 |
V V V A A A A A A2s A A °C °C |
20 20 30 135 150 91 2 2 175 150 |
Dual, low leakage, platinum barrier, schottky barrier rectifier diodes PBYR3045PTF in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability.
PBYR3045PTF are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.