PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIF(AV)IFRMI2tIFSMIRRMTjTstg Repetitive peak reverse voltageCrest working reverse voltageContinuous reverse voltageOutput current (both diodesconducting)1RMS forward currentRepetitive peak forward currentper dio...
PBYR3045PT: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIF(AV)IFRMI2tIFSMIRRMTjTstg Repetitive peak reverse voltageCrest working reverse voltageContinuous reverse vol...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | ||
VRRM VRWM VR IF(AV) IFRM I2t IFSM IRRM Tj Tstg |
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Repetitive peak reverse current per diode. Non-repetitive peak reverse current per diode. Storage temperature Operating junction temperature |
Tmb 136 °C square wave; = 0.5; Tmb 130 °C t = 25 ms; = 0.5; Tmb 130 °C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 °C prior to surge; with reapplied VRWM(max) t = 10 ms tp = 2 ms; = 0.001 tp = 100 ms |
- - - - - - - - - - - -65 - |
-35 35 35 35 |
-40 40 40 40 |
-45 45 45 45 |
V V V A A A A A A2s A A °C °C |
30 43 30 180 200 162 2 2 175 150 |
Dual, low leakage, platinum barrier, schottky rectifier diodes PBYR3045PT in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability.
PBYR3045PT are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.