Features: Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability.The devices are intended for use in swi...
PBYR30100PT: Features: Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse vol...
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Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability.
The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | ||
VRRM VRWM VR IF(AV) IFRM I2t IFSM IRRM Tj Tstg |
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Repetitive peak reverse current per diode. Non-repetitive peak reverse current per diode. Storage temperature Operating junction temperature |
Tmb 139 °C square wave; = 0.5; Tmb 124°C t = 25 ms; = 0.5; Tmb 124 °C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 °C prior to surge; with reapplied VRWM(max) t = 10 s tp = 2 s; = 0.001 tp = 100 s |
- - - - - - - - - - - -65 - |
-60 60 60 60 |
-80 80 80 80 |
-100 100 100 100 |
V V V A A A A A A2s A A °C °C |
30 43 30 180 200 162 1 1 175 150 |