PBYR2525CT

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIO(AV)IO(RMS)IFRMI2tIFSMIRRMTjTstg Repetitive peak reverse voltageCrest working reverse voltageContinuous reverse voltageAverage output current (bothdiodes conducting)RMS output current (bothdiodes conducting)R...

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PBYR2525CT Picture
SeekIC No. : 004455749 Detail

PBYR2525CT: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIO(AV)IO(RMS)IFRMI2tIFSMIRRMTjTstg Repetitive peak reverse voltageCrest working reverse voltageContinuous reve...

floor Price/Ceiling Price

Part Number:
PBYR2525CT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
I2t
IFSM
IRRM
Tj
Tstg
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage

Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current, per diode

I2t for fusing
Repetitive peak reverse current
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
Tmb 109 °C
square wave; = 0.5;
Tmb 135 °C
t = 25 ms; = 0.5;
Tmb 135 °C
t = 10 ms
t = 8.3 ms
sinusoidal Tj = 125 °C prior
to surge; with reapplied
VRRM(max)
t = 10 ms
tp = 2 ms; d = 0.001
tp = 100 ms
-
-
-
-
-
-
-
-
-
-
-
-65
-
-20
20
20
20
-25
25
25
25
V
V
V
A
A
A
A
A
A2s
A
A
°C
°C
30
43
30
180
200
162
2
2
175
150



Description

Dual nickel silicide schottky barrier rectifier diodes PBYR2525CT in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability.

PBYR2525CT are intended for use in switched mode power supplies with 3 V - 3.3 V outputs, or as or-ing diodes in fault tolerant power supply systems.




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