PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIO(AV)IO(RMS)IFRMI2tIFSMIRRMTjTstg Repetitive peak reverse voltageCrest working reverse voltageContinuous reverse voltageAverage output current (bothdiodes conducting)RMS output current (bothdiodes conducting)R...
PBYR2525CT: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIO(AV)IO(RMS)IFRMI2tIFSMIRRMTjTstg Repetitive peak reverse voltageCrest working reverse voltageContinuous reve...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | |
VRRM VRWM VR IO(AV) IO(RMS) IFRM I2t IFSM IRRM Tj Tstg |
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode I2t for fusing Repetitive peak reverse current per diode Non-repetitive peak reverse current per diode Storage temperature Operating junction temperature |
Tmb 109 °C square wave; = 0.5; Tmb 135 °C t = 25 ms; = 0.5; Tmb 135 °C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 °C prior to surge; with reapplied VRRM(max) t = 10 ms tp = 2 ms; d = 0.001 tp = 100 ms |
- - - - - - - - - - - -65 - |
-20 20 20 20 |
-25 25 25 25 |
V V V A A A A A A2s A A °C °C |
30 43 30 180 200 162 2 2 175 150 |
Dual nickel silicide schottky barrier rectifier diodes PBYR2525CT in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability.
PBYR2525CT are intended for use in switched mode power supplies with 3 V - 3.3 V outputs, or as or-ing diodes in fault tolerant power supply systems.