Features: · Low switching losses· Low forward voltage· High breakdown voltage· Fast recovery time· Guard ring protected· Plastic SMD package.Application· Low power, switched-mode power supplies· Rectification· Polarity protection.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. ...
PBYR2150CT: Features: · Low switching losses· Low forward voltage· High breakdown voltage· Fast recovery time· Guard ring protected· Plastic SMD package.Application· Low power, switched-mode power supplies· Rec...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
Per diode | |||||
VR | continuous reverse voltage | - | 150 | V | |
VRRM | repetitive peak reverse voltage | - | 150 | V | |
VRWM | crest working reverse voltage | - | 150 | V | |
IF(AV) | average forward current | Tamb = 85 °C; Rth j-a = 70 K/W; note 1; VR(equiv) = 0.2 V; note 2 |
- | 1 | A |
IFSM | non-repetitive peak forward current | t = 8.3 ms half sinewave; JEDEC method |
- | 10 | A |
The PBYR2150CT is a Schottky barrier double diode, fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package.