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PBYR2100CT

Features: · Low switching losses· High breakdown voltage· Fast recovery time· Guard ring protected· Plastic SMD package.Application· Low power, switched-mode power supplies· Rectification· Polarity protection.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode ...

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SeekIC No. : 004455745 Detail

PBYR2100CT: Features: · Low switching losses· High breakdown voltage· Fast recovery time· Guard ring protected· Plastic SMD package.Application· Low power, switched-mode power supplies· Rectification· Polarity ...

PBYR2100CT Data Sheet

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Part Number:
PBYR2100CT
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low switching losses
· High breakdown voltage
· Fast recovery time
· Guard ring protected
· Plastic SMD package.


Application

· Low power, switched-mode power supplies
· Rectification
· Polarity protection.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VR continuous reverse voltage   - 100 V
VRRM repetitive peak reverse voltage   - 100 V
VRWM crest working reverse voltage   - 100 V
IF(AV) average forward current Tamb = 85 °C; Rth j-a = 70 K/W;
note 1; VR(equiv) = 0.2 V; note 2		 - 1 A
IFSM non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method		 - 10 °C
IRSM non-repetitive peak reverse current tp = 100 s - 0.5 °C
Tstg storage temperature   - +150 °C
Tj junction temperature   - +150 °C
Tamb operating ambient temperature   - 85 °C

Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request.




Description

Schottky barrier double diode PBYR2100CT fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package.


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