PBRN123EK,115

Series: -
Manufacturer: NXP Semiconductors
Transistor Type: NPN - Pre-Biased
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Power - Max: 250mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Resistor - Base (R1) (Ohms): 2.2k
Current - Collector Cutoff (Max): 500nA
Resistor - Emitter Base (R2) (Ohms): 2.2k
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA


Parameters:

Technical/Catalog Information	PBRN123EK,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	600mA
Power - Max	570mW
Resistor - Base (R1) (Ohms)	2.2K
Resistor - Emitter Base (R2) (Ohms)	2.2K
Vce Saturation (Max) @ Ib, Ic	160mV @ 10mA, 500mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	280 @ 300mA, 5V
Frequency - Transition	-
Mounting Type	Surface Mount
Package / Case	SC-59-3, SMT3, SOT-346, TO-236
Packaging	Tape & Reel (TR)
Drawing Number	568; SOT346; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PBRN123EK,115 PBRN123EK,115