PBRN113ZS,126

Series: -
Manufacturer: NXP Semiconductors
Transistor Type: NPN - Pre-Biased
Frequency - Transition: -
Resistor - Emitter Base (R2) (Ohms): 10k
Resistor - Base (R1) (Ohms): 1k
Current - Collector Cutoff (Max): 500nA
Mounting Type: Through Hole
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800mA
Power - Max: 700mW


Parameters:

Technical/Catalog Information	PBRN113ZS,126
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	800mA
Power - Max	700mW
Resistor - Base (R1) (Ohms)	1K
Resistor - Emitter Base (R2) (Ohms)	10K
Vce Saturation (Max) @ Ib, Ic	160mV @ 10mA, 500mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 300mA, 5V
Frequency - Transition	-
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Tape & Box (TB)
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PBRN113ZS,126 PBRN113ZS,126