Features: *+22.7 dBm at 45% Power Added Efficiency *Low current 80mA typical @ Pout=+20 dBm *Temperature stability better than 1dB *Power-control and Power-down modes *Single 3.3 V Supply Operation *Temperature Rating: -40C to +85C *8 lead Exposed Pad MSOP Plastic Package*An analog control input f...
PA2423MB: Features: *+22.7 dBm at 45% Power Added Efficiency *Low current 80mA typical @ Pout=+20 dBm *Temperature stability better than 1dB *Power-control and Power-down modes *Single 3.3 V Supply Operation ...
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Symbol | Parameter | Min. | Max. | Unit |
VCC | Supply Voltage | -0.3 | +3.6 | V |
VCTL | Control Voltage | -0.3 | VCC | V |
VRAMP | Ramping Voltage | -0.3 | VCC | V |
IN | RF Input Power | +8 | dBm | |
TA | Operating Temperature Range | -40 | +8.5 | °C |
TSTG | Storage Temperature Range | -40 | +150 | °C |
Tj | Maximum Junction Temperature | +150 | °C |
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.7 dBm output power with 45% power-added efficiency making it capable of overcoming insertion losses of up to 2.7 dB between amplifier output and antenna input in class 1 Bluetoothtm applications.
An on-chip ramping circuit of PA2423MB provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.1.
The PA2423MB operates at 3.3V DC. At typical output power level (+22.7 dBm), its current consumption is 125 mA.
The silicon/silicon-germanium structure of the PA2423MB and its exposed-die-pad package, soldered to the system PCB provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent.