PA2423G

A monolithic, high-efficiency, silicon-germanium power amplifier IC PA2423G, the PA2423G is designed for Class 1 Bluetoothtm 2.4 GHz radio applications. PA2423G delivers +22.5 dBm output power with 47% power-added efficiency making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in Class 1 Bluetooth^tm applications.

PA2423G features:
an analog control input for improving PAE at reduced output power levels;
a digital control input for controlling power up and power down modes of operation.

An on-chip ramping circuit corrects the turn-on/off switching of PA2423G output with less than 3 dB overshoot, meeting the Bluetooth^tm specification 1.1.

The PA2423G operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 120 mA.

The silicon/silicon-germanium structure of the PA2423G provides high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent.