Specifications PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 55 A TC = 100 °C 38 Pulsed Drain Current1 IDM 150 Avalanche Current IAR 36 Avalanche Energy L = 0.1m...
P50N02LD: Specifications PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 55 A TC = 100 °C 38 ...
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PARAMETERS/TEST CONDITIONS |
SYMBOL |
LIMITS |
UNITS | |
Gate-Source Voltage |
VGS |
±20 |
V | |
Continuous Drain Current | TC = 25 °C |
ID |
55 |
A |
TC = 100 °C |
38 | |||
Pulsed Drain Current1 |
IDM |
150 | ||
Avalanche Current |
IAR |
36 | ||
Avalanche Energy | L = 0.1mH |
EAS |
250 |
mJ |
Repetitive Avalanche Energy2 | L = 0.05mH |
EAR |
8.6 | |
Power Dissipation | TC = 25 °C |
PD |
80 |
W |
TC = 100 °C |
41 | |||
Operating Junction & Storage Temperature Range |
Tj, Tstg |
-55 to 150 |
°C | |
Lead Temperature (1/16" from case for 10 sec.) |
TL |
275 |