P3Z22V10

Features: • Industry's first TotalCMOSE 22V10 both CMOS design and process technologies• Fast Zero Power (FZPE) design technique provides ultra-low power and high speed Static current of less than 45mA Dynamic current 1/10 to 1/1000 that of competitive devices Pin-to-pin delay of o...

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SeekIC No. : 004439233 Detail

P3Z22V10: Features: • Industry's first TotalCMOSE 22V10 both CMOS design and process technologies• Fast Zero Power (FZPE) design technique provides ultra-low power and high speed Static current ...

floor Price/Ceiling Price

Part Number:
P3Z22V10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Industry's first TotalCMOSE 22V10 both CMOS design and process technologies
• Fast Zero Power (FZPE) design technique provides ultra-low power and high speed
   Static current of less than 45mA
   Dynamic current 1/10 to 1/1000 that of competitive devices
   Pin-to-pin delay of only 10ns
• True Zero Power device with no turbo bits or power down schemes
• Function/JEDEC map compatible with Bipolar, UVCMOS, EECMOS 22V10s
• Multiple packaging options featuring PCB-friendly flow-through pinouts (SOL and TSSOP)
   24-pin TSSOP-uses 93% less in-system space than a 28-pin PLCC
   24-pin SOL
   28-pin PLCC with standard JEDEC pin-out
• Available in commercial and industrial operating ranges
• Supports mixed voltage systems5V tolerant I/Os
• Advanced 0.5m E2CMOS process
• 1000 erase/program cycles guaranteed
• 20 years data retention guaranteed Varied product term distribution with up to 16 product terms per output for complex functions
• Programmable output polarity
• Synchronous preset/asynchronous reset capability
• Security bit prevents unauthorized access
• Electronic signature for identification
• Design entry and verification using industry standard CAE tools
• Reprogrammable using industry standard device programmers



Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
LIMITS
UNIT
MIN.
MAX.
VDD
Supply voltage
0.5
4.6
V
VI
Input voltage
0.5
5.52
V
VOUT
Output voltage
0.5
5.52
V
IIN
Input current
30
30
mA
IOUT
Output current
100
100
mA
TR
Allowable thermal rise ambient to junction
0
75
°C
TJ
Junction temperature range
-40
150
°C
TSTG
Storage temperature range
-65
150
°C
NOTES:
1. Stresses above those listed may cause malfunction or permanent damage to the device. This is a stress rating only. Functional operation at these or any  other condition above those indicated in the operational and programming specification of the device is not implied.
2. Except F7, where max = VDD + 0.5V.



Description

The P3Z22V10 is the first SPLD to combine high performance with low power, without the need for "turbo bits" or other power down schemes. To achieve this, Philips Semiconductors has used their FZPE design technique, which replaces conventional sense amplifier methods for implementing product terms (a technique that has been used in PLDs since the bipolar era) with a cascaded chain of pure CMOS gates. P3Z22V10 results in the combination of low power and high speed that has previously been unattainable in the PLD arena. For 5V operation, Philips Semiconductors offers the P5Z22V10 that offers high speed and low power in a 5V implementation.

The P3Z22V10 uses the familiar AND/OR logic array structure, which allows direct implementation of sum-of-products equations. P3Z22V10 has a programmable AND array which drives a fixed OR array. The OR sum of products feeds an "Output Macro Cell" (OMC), which can be individually configured as a dedicated input, a combinatorial output, or a registered output with internal feedback.




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