P281

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 10Watts 15/W 200 -65 to150 0.8 A 70 V 70V 30VD...

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SeekIC No. : 004439120 Detail

P281: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolta...

floor Price/Ceiling Price

Part Number:
P281
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/24

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
10Watts
15/W
200
-65 to150
0.8 A
70 V
70V
30V





Description

Silicon VDMOS and LDMOS transistors P281 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"TM process of P281 features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance






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