Features: ·Ka-Band 4 W Power Amplifier·Balanced Design Provides Good Input/Output Match·21.0 dB Small Signal Gain·+35.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010SpecificationsSupply Voltage (Vd) ........... +6.5 VDCSu...
P1027-BD: Features: ·Ka-Band 4 W Power Amplifier·Balanced Design Provides Good Input/Output Match·21.0 dB Small Signal Gain·+35.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% ...
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Supply Voltage (Vd) ........... +6.5 VDC
Supply Current (Id1,2,3).....325,825,1575 mA
Gate Bias Voltage (Vg)..........+0.3 VDC
Input Power (Pin)............... TBD
Storage Temperature (Tstg).... -65 to +165
Operating Temperature (Ta)..-55 to MTTF Table1
Channel Temperature (Tch) ..... MTTF Table1
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35 dBm saturated output power. The P1027-BD also includes Lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1027-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. P1027-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.