Features: ·Ka-Band 2W Power Amplifier·22.0 dB Small Signal Gain·+33.0 dBm Saturated Output Power·+40.0 dBm Output Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.5 VDC Supply ...
P1026-BD: Features: ·Ka-Band 2W Power Amplifier·22.0 dB Small Signal Gain·+33.0 dBm Saturated Output Power·+40.0 dBm Output Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100% Visu...
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Supply Voltage (Vd) | +6.5 VDC |
Supply Current (Id1,2,3) | 165,415,790 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | TBD |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table 1 |
Junction Temperature (Tch) | MTTF Table 1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's three stage 27.0-32.0 GHz GaAs MMIC power amplifier has a small signal gain of 22.0 dB with +33 dBm saturated output power. This P1026-BD MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1026-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This P1026-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.