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P1025-BD

Features: ·Ka-Band 1 W Power Amplifier·27.0 dB Small Signal Gain·+30.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.5 VDC Supply Current (Id1,2,3) 112,170,450 mA Gate Bia...

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SeekIC No. : 004438974 Detail

P1025-BD: Features: ·Ka-Band 1 W Power Amplifier·27.0 dB Small Signal Gain·+30.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Speci...

P1025-BD Data Sheet

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Part Number:
P1025-BD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Ka-Band 1 W Power Amplifier
·27.0 dB Small Signal Gain
·+30.0 dBm Saturated Output Power
·100% On-Wafer RF, DC and Output Power Testing
·100% Visual Inspection to MIL-STD-883 Method 2010


Specifications

</TBODY
Supply Voltage (Vd) +6.5 VDC
Supply Current (Id1,2,3) 112,170,450 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (Pin) TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table 1
Junction Temperature (Tch) MTTF Table 1


(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's three stage 28.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +30.0 dBm saturated output power. This P1025-BD MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1025-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.P1025-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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