Features: ·Excellent Transmit Output Stage·Temperature Compensated Output Detector·On-Chip ESD Protection·20.0 dB Small Signal Gain·+28.0 dBm P1dB Compression Point·RoHS Compliant SMD, 4x4 mm QFN Package·100% RF, DC and Output Power TestingSpecifications Supply Voltage (Vd) +6.0 VDC Suppl...
P1022-QF: Features: ·Excellent Transmit Output Stage·Temperature Compensated Output Detector·On-Chip ESD Protection·20.0 dB Small Signal Gain·+28.0 dBm P1dB Compression Point·RoHS Compliant SMD, 4x4 mm QFN Pa...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id1,2,3) | 145, 290, 580 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +19.0 dBm |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table 1 |
Junction Temperature (Tjn) | MTTF Table 1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's three stage 17.0-25.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 20.0 dB with a +28.0 dBm P1dB output compression point across much of the band. The P1022-QF also includes a temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1022-QF comes in a RoHS compliant 4x4mm QFN Surface Mount Package offering excellent RF and thermal properties. P1022-QF is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.